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TCD1205D 2001-02-16 1/13 toshiba ccd linear image sensor ccd(charge coupled device) TCD1205D the TCD1205D is a high sensitive and low dark current 2048 ? elements linear image sensor. the sensor can be used for pos handscanner. the device is operated by only 5v power supply, and mounted in 22 ? pin cerdip package with hermetic sealed optical glass window. the TCD1205D has electronic shutter function (icg). electronic shutter function can keep always output voltage constant that vary with the intensity of lights. features number of image sensing elements : 2048 image sensing element size : 14m by 200m on 14m centers photo sensing region : high sensitive and low dark current pn photodiode clock : 2 phase (5v) internal circuit : electronic shutter function (icg) package : 22 pin cerdip maximum ratings (note 1) characteristic symbol rating unit clock pulse voltage v shift pulse voltage v sh reset, boost pulse voltage v rs , v bt integration clear gate pulse voltage v icg power supply voltage v od ? 0.3~8 v operating temperature t opr ? 25~60 c storage temperature t stg ? 40~100 c note 1: all voltage are with respect to ss terminals (ground). weight: 4.4g (typ.) pin connection (top view) toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. 000707 eba2
TCD1205D 2001-02-16 2/13 circuit diagram pin names 1 clock (phase 1) 2 clock (phase 2) rs reset gate sh shift gate i cg integration clear gate bt boost gate os signal output dos compensation output od power ss ground nc non connection the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others. the information contained herein is subject to change without notice. 000707 eba2
TCD1205D 2001-02-16 3/13 optical / electrical characteristics (ta = 25c, v od = 5v, v = v sh = v rs = v bt = 5v (pulse), f = 0.5mhz, f rs = 1mhz, load resistance = 100k ? , t int (integration time) = 10ms, light source = daylight fluorescent lamp) characteristic symbol min typ. max unit note sensitivity r 64 80 D v / lxs (note 2) photo response non uniformity prnu D D 10 % (note 3) saturation output voltage v sat 0.55 0.8 D v (note 4) saturation exposure se 0.006 0.01 D lxs (note 5) dark signal voltage v mdk D 2 5 mv (note 6) dc power dissipation pd D D 25 mw total transfer efficiency tte 92 95 D % output impedance z o D 0.5 1 k ? dynamic range dr D 400 D D (note 7) dc signal output voltage v os 1.5 3.0 4.5 v (note 8) dc compensation output voltage v dos 1.5 3.0 4.5 v (note 8) dc mismatch voltage |v os ? v dos | D D 200 mv (note 8) note 2: sensitivity for led (660nm) is 600v / lxs (typ.) note 3: measured at 50% of se (typ.) definition of prnu: prnu = % 100 where is average of total signal outputs and is the maximum deviation from under uniform illumination. note 4: v sat is defined as minimum saturation output voltage of all effective pixels. note 5: definition of se : se = s lx r sat v note 6: v mdk is defined as maximum dark signal voltage of all effective pixels. note 7: definition of dr : dr = mdk v sat v v mdk is proportional to t int (integration time). so the shorter t int condition makes wider dr value. note 8: dc signal output voltage and dc compensation output voltage are defined as follows:
TCD1205D 2001-02-16 4/13 operating condition characteristic symbol min typ. max unit ?h? level 4.5 5.0 5.5 clock pulse voltage ?l? level v 0 0.2 0.5 v ?h? level 4.5 5.0 5.5 shift pulse voltage ?l? level v sh 0 0.2 0.5 v ?h? level 4.5 5.0 5.5 reset, boost pulse voltage ?l? level v rs , v bt 0 0.2 0.5 v ?h? level 4.5 5.0 5.5 integration clear gate voltage ?l? level v icg 0 0.2 0.5 v power supply voltage v od 4.5 5.0 5.5 v clock characteristics (ta = 25c) characteristic symbol min typ. max unit clock pulse frequency f 0.01 0.5 1.0 mhz reset pulse frequency f rs 0.02 1.0 2.0 mhz clock capacitance c a D 400 500 pf bt gate capacitance c bt D 10 25 pf shift gate capacitance c sh D 200 250 pf reset gate capacitance c rs D 10 25 pf integration clear gate capacitance c icg D 100 200 pf
TCD1205D 2001-02-16 5/13 taiming chart
TCD1205D 2001-02-16 6/13 taiming chart ( example : use electronic shutter )
TCD1205D 2001-02-16 7/13 timing requirements note 10: if 1 & 2 pulse cross point couldn't be kept over 2.5v, it should be 1.5v and t23 and t24 should be 60ns.
TCD1205D 2001-02-16 8/13 characteristic symbol min typ. max unit pulse timing of sh & 1 t1 0 100 D ns pulse timing of sh & 1 t5 2000 3000 D ns sh, icg pulse rise & fall time t2, t4 0 50 D ns sh pulse width (note 11) t3, t3' 1000 2000 D ns pulse timing of sh & icg t6 50 100 * ns pulse timing of sh & icg t7 1000 D t5 ns pulse timing of icg & 1 t8 0 100 D ns pulse timing of icg & 1 t9 500 D D ns 1, 2 pulse rise & fall time t10, t11 0 60 D ns rs, bt pulse rise & fall time t12, t14 0 60 D ns rs pulse width t13 60 260 D ns pulse timing of 1, 2, rs t15 20 D D ns pulse timing of rs & bt t16 50 100 D ns pulse timing of rs & bt t17 20 D D ns pulse timing of rs & bt t18 40 D D ns pulse timing of rs & bt t19 200 D D ns bt pulse width t20 70 250 D ns video data delay time t21, t22 D 80 D ns note 11: have to use t3 = t3' * t6 = maximum timing
TCD1205D 2001-02-16 9/13
TCD1205D 2001-02-16 10/13
TCD1205D 2001-02-16 11/13 typical drive circuit
TCD1205D 2001-02-16 12/13 caution 1. window glass the dust and stain on the glass window of the package degrade optical performance of ccd sensor. keep the glass window clean by saturating a cotton swab in alcohol and lightly wiping the surface, and allow the glass to dry, by blowing with filtered dry n 2 . care should be taken to avoid mechanical or thermal shock because the glass window is easily to damage. 2. electrostatic breakdown store in shorting clip or in conductive foam to avoid electrostatic breakdown. 3. incident light ccd sensor is sensitive to infrared light. note that infrared light component degrades resolution and prnu of ccd sensor. 4. lead frame forming since this package is not stout against mechanical stress, you should not reform the lead frame. we recommend to use a ic ? inserter when you assemble to pcb.
TCD1205D 2001-02-16 13/13 package diemensions wdip22 ? g ? 400 ? 2.54a (d) unit: mm note 1: no. 1 sensor element (s1) to edge of package. note 2: top of chip to bottom of package. note 3: glass thicknes (n = 1.5) weight: 4.4g (typ.)

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